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SI4322DY-T1-GE3

SI4322DY-T1-GE3

SI4322DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 18A 8-SOIC

SOT-23

SI4322DY-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Power Dissipation-Max 3.1W Ta 5.4W Tc
Element Configuration Single
Power Dissipation 3.1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 15V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant

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