SI4411DY-T1-GE3

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Manufacturer part number:SI4411DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 9A 8-SOIC

Case Package:SOT-23

Datasheet:SI4411DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Power Dissipation	1.5W
Turn On Delay Time	18 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	9A Ta
Gate Charge (Qg) (Max) @ Vgs	65nC @ 5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	75 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	10mOhm
Rds On Max	10 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant