IRF7665S2TRPBF

new-10%

Manufacturer part number:IRF7665S2TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V DIRECTFET SB

Case Package:SOT-23

Datasheet:IRF7665S2TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.4W Ta 30W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	DRAIN
Turn On Delay Time	3.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	62m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id	5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	515pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.1A Ta 14.4A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	6.4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	7.1 ns
Continuous Drain Current (ID)	14.4A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.062Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	58A
Nominal Vgs	4 V
Height	508μm
Length	4.826mm
Width	3.9624mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant