SI4599DY-T1-GE3

new-10%

Manufacturer part number:SI4599DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI4599DY-T1-GE3 - Dual MOSFET, N and P Channel, 6.8 A, 40 V, 0.0295 ohm, 10 V, 1.4 V

Case Package:SOT-23

Datasheet:SI4599DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	540.001716mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	45mOhm
Max Power Dissipation	3.1W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI4599
Pin Count	8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Turn On Delay Time	44 ns
Power - Max	3W 3.1W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35.5m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 20V
Current - Continuous Drain (Id) @ 25°C	6.8A 5.8A
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	33ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	13 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	6.8A
Threshold Voltage	1.4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5.6A
Drain to Source Breakdown Voltage	40V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free