SIZ730DT-T1-GE3

new-10%

Manufacturer part number:SIZ730DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 16/35A 27/48W 9.3/3.9mohm @ 10V

Case Package:SOT-23

Datasheet:SIZ730DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-PowerPair™
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Max Power Dissipation	48W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIZ730
Pin Count	6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
Power - Max	27W 48W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	830pF @ 15V
Current - Continuous Drain (Id) @ 25°C	16A 35A
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0053Ohm
Pulsed Drain Current-Max (IDM)	100A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	45 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	6mm
Width	3.73mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free