NTHC5513T1G

new-10%

Manufacturer part number:NTHC5513T1G

Manufacturer:ON Semiconductor

Description:MOSFET N/P-CH 20V 1206A

Case Package:SOT-23

Datasheet:NTHC5513T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Surface Mount	YES
Number of Pins	8
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	20V
Max Power Dissipation	1.1W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	3.1A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTHC5513
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	7 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.9A 2.2A
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Rise Time	13ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	3.9A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	10A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	600 mV
Height	1.1mm
Length	3.1mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free