SI7223DN-T1-GE3

join

new-10%

Manufacturer part number:SI7223DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:SI7223DN-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SI7223DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen III
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	2.6W Ta 23W Tc
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	26.4mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1425pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Drain to Source Voltage (Vdss)	30V
FET Feature	Standard
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
3,000	$0.44280	$1.3284
6,000	$0.42201	$2.53206
15,000	$0.40716	$6.1074

SI7223DN-T1-GE3 Description

SI7223DN-T1-GE3 developed by Vishay Siliconix belongs to the family of P-MOSFETs which use the gate voltage to control the drain current. Its notable features are a simple drive circuit, low drive power, fast switching speed, and high operating frequency. It is also characterized by small current capacity, and low withstand voltage, and it is only used for low-power electronic devices. Its working principle is the same as that of ordinary MOSFET. All these characteristics make it well-suited for load switches, battery protection, hand-held and mobile devices, etc.