SI4829DY-T1-GE3

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Manufacturer part number:SI4829DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 2A 8-SOIC

Case Package:SOT-23

Datasheet:SI4829DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	LITTLE FOOT®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta 3.1W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	215m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	210pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Continuous Drain Current (ID)	2A
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	0.215Ohm
DS Breakdown Voltage-Min	20V
FET Feature	Schottky Diode (Isolated)
RoHS Status	ROHS3 Compliant