SI4831BDY-T1-GE3

new-10%

Manufacturer part number:SI4831BDY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 6.6A 8-SOIC

Case Package:SOT-23

Datasheet:SI4831BDY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2W Ta 3.3W Tc
Element Configuration	Single
Power Dissipation	2W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	625pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6.6A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	5.1A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	625pF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	42mOhm
Rds On Max	42 mΩ
RoHS Status	ROHS3 Compliant