BSC050N03MSGATMA1

new-10%

Manufacturer part number:BSC050N03MSGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 30V 16A 8-Pin TDSON EP

Case Package:SOT-23

Datasheet:BSC050N03MSGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 50W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 15V
Current - Continuous Drain (Id) @ 25°C	16A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	7.2ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.0063Ohm
Pulsed Drain Current-Max (IDM)	320A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	35 mJ
RoHS Status	ROHS3 Compliant