FQA46N15

new-10%

Manufacturer part number:FQA46N15

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 42m Ω @ 25A, 10V ±25V 3250pF @ 25V 110nC @ 10V TO-3P-3, SC-65-3

Case Package:SOT-23

Datasheet:FQA46N15 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 hours ago)
Factory Lead Time	5 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	QFET®
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	42MOhm
Additional Feature	FAST SWITCHING
Subcategory	FET General Purpose Power
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Current Rating	50A
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	42m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	320ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	200 ns
Turn-Off Delay Time	210 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	650 mJ
Height	20.1mm
Length	15.8mm
Width	5mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free