SI4925BDY-T1-E3

new-10%

Manufacturer part number:SI4925BDY-T1-E3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI4925BDY-T1-E3 - DUAL P CHANNEL MOSFET, -30V, SOIC

Case Package:SOT-23

Datasheet:SI4925BDY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Other Transistors
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI4925
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	1.1W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	5.3A
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	5.3A
Drain-source On Resistance-Max	0.025Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	2W
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant