SQJ992EP-T1_GE3

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Manufacturer part number:SQJ992EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SQJ992EP-T1-GE3 Dual MOSFET, Dual N Channel, 15 A, 60 V, 0.047 ohm, 10 V, 2 V

Case Package:SOT-23

Datasheet:SQJ992EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	47mOhm
Max Power Dissipation	34W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	34W
Case Connection	DRAIN
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	56.2m Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	446pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Drain to Source Voltage (Vdss)	60V
Continuous Drain Current (ID)	15A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	60A
DS Breakdown Voltage-Min	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant