SI3458DV-T1-E3

new-10%

Manufacturer part number:SI3458DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 3.2A 6-TSOP

Case Package:SOT-23

Datasheet:SI3458DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Weight	19.986414mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2W Ta
Element Configuration	Single
Power Dissipation	2W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	3.2A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	100mOhm
Rds On Max	100 mΩ
Height	1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free