SI7160DP-T1-E3

new-10%

Manufacturer part number:SI7160DP-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 20A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7160DP-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	8.7MOhm
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	5W Ta 27.7W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Case Connection	DRAIN
Turn On Delay Time	29 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2970pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Rise Time	115ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	17.8A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	20 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free