SI7272DP-T1-GE3

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SI7272DP-T1-GE3

Manufacturer part number:SI7272DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 30V 25A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7272DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Max Power Dissipation	22W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI7272
Pin Count	8
JESD-30 Code	R-XDSO-C6
Qualification Status	Not Qualified
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V
Current - Continuous Drain (Id) @ 25°C	25A
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	15A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0093Ohm
Pulsed Drain Current-Max (IDM)	60A
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.04mm
Length	4.9mm
Width	5.89mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free