SIZ704DT-T1-GE3

new-10%

Manufacturer part number:SIZ704DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 12/16A 20/30W 24/13.5mohm @ 10V

Case Package:SOT-23

Datasheet:SIZ704DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-PowerPair™
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Max Power Dissipation	30W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIZ704
Pin Count	6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	15 ns
Power - Max	20W 30W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A 16A
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	12ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9.4A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	6mm
Width	3.73mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant