APTM50AM24SG

new-10%

Manufacturer part number:APTM50AM24SG

Manufacturer:Microsemi Corporation

Description:MOSFET 2N-CH 500V 150A SP6

Case Package:SOT-23

Datasheet:APTM50AM24SG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Power Dissipation	1.25kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25kW
Case Connection	ISOLATED
Turn On Delay Time	10 ns
Power - Max	1250W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	5V @ 6mA
Input Capacitance (Ciss) (Max) @ Vds	19600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	434nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	500V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	150A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	600A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	1300 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free