SIA913ADJ-T1-GE3

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Manufacturer part number:SIA913ADJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 12V 4.5A 6.5W 61mohm @ 4.5V

Case Package:SOT-23

Datasheet:SIA913ADJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Max Power Dissipation	6.5W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIA913
Pin Count	3
JESD-30 Code	S-XDSO-N6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	20 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	61m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	590pF @ 6V
Current - Continuous Drain (Id) @ 25°C	4.5A
Gate Charge (Qg) (Max) @ Vgs	20nC @ 8V
Rise Time	25ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	4.3A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4.5A
Drain-source On Resistance-Max	0.061Ohm
Drain to Source Breakdown Voltage	-12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	2.05mm
Width	2.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant