SI7452DP-T1-GE3

new-10%

Manufacturer part number:SI7452DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 11.5A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7452DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Weight	506.605978mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	8.3mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.9W Ta
Element Configuration	Single
Turn On Delay Time	45 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.3mOhm @ 19.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	11.5A Ta
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	11.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	8.3mOhm
Rds On Max	8.3 mΩ
Height	1.04mm
Length	4.9mm
Width	5.89mm
RoHS Status	ROHS3 Compliant