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SI7489DP-T1-GE3

SI7489DP-T1-GE3

SI7489DP-T1-GE3

Vishay Siliconix

SI7489DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

SOT-23

SI7489DP-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.2W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 41m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 160ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) -28A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 40A
Max Junction Temperature (Tj) 150°C
Nominal Vgs -3 V
Turn On Time-Max (ton) 55ns
Height 1.12mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.35518 $4.06554
6,000 $1.30815 $7.8489
SI7489DP-T1-GE3 Product Details

SI7489DP-T1-GE3 Description


The SI7489DP-T1-GE3 is a P-Channel 100-V (D-S) MOSFET. The most typical method for creating the type of field-effect transistor (FET) known as a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by carefully controlling the oxidation of silicon. The conductivity of the device is controlled by the voltage of an insulated gate. Electronic signals can be amplified or switched using this property of conductivity that changes with the amount of applied voltage. A MOSFET is generally always referred to as a metal-insulator-semiconductor field-effect transistor (MISFET). An insulated-gate field-effect transistor (IGFET) is another alternative term.



SI7489DP-T1-GE3 Features


  • Halogen-free According to IEC 61249-2-21 Available

  • TrenchFET® Power MOSFET

  • Withstand voltage

  • Low On-Resistance

  • High current



SI7489DP-T1-GE3 Applications


  • Switch mode power supplies

  • Variable-frequency drives

  • Power electronics applications

  • Regulate DC motors

  • Chopper circuit


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