SI7748DP-T1-GE3

new-10%

Manufacturer part number:SI7748DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 50A 56W 4.8mohm @ 10V

Case Package:SOT-23

Datasheet:SI7748DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	SkyFET®, TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	4.8mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	4.8W Ta 56W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.8W
Case Connection	DRAIN
Turn On Delay Time	36 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.7V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3770pF @ 15V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	23.5A
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	45 mJ
Height	1.04mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free