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DMN3024LSD-13

DMN3024LSD-13

DMN3024LSD-13

Diodes Incorporated

MOSFET 2N-CH 30V 6.8A 8SO

SOT-23

DMN3024LSD-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1.8W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DMN3024LSD
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 2.9 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.8A
Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 10V
Rise Time 3.3ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 7.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.7A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.149034 $0.149034
10 $0.140598 $1.40598
100 $0.132640 $13.264
500 $0.125132 $62.566
1000 $0.118049 $118.049

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