SIA814DJ-T1-GE3

new-10%

Manufacturer part number:SIA814DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 4.5A 6.5W 61mohm @ 10V

Case Package:SOT-23

Datasheet:SIA814DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	LITTLE FOOT®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	61mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.9W Ta 6.5W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	61m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Isolated)
Nominal Vgs	1.5 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free