SIA907EDJT-T1-GE3

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Manufacturer part number:SIA907EDJT-T1-GE3

Manufacturer:Vishay Siliconix

Description:SiA907EDJT Series Dual P Channel 20 V 0.057 Ohm 7.8 W Mosfet - PowerPAK SC-70-6L

Case Package:SOT-23

Datasheet:SIA907EDJT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	57mOhm
Subcategory	Other Transistors
Max Power Dissipation	7.8W
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	57m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead