SIB411DK-T1-E3

new-10%

Manufacturer part number:SIB411DK-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 9A SC75-6

Case Package:SOT-23

Datasheet:SIB411DK-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Supplier Device Package	PowerPAK® SC-75-6L Single
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.4W Ta 13W Tc
Element Configuration	Single
Power Dissipation	2.4W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	66mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 10V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Rise Time	10ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	4.8A
Gate to Source Voltage (Vgs)	8V
Input Capacitance	470pF
Drain to Source Resistance	66mOhm
Rds On Max	66 mΩ
RoHS Status	ROHS3 Compliant