SIE802DF-T1-E3

new-10%

Manufacturer part number:SIE802DF-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 60A 10-POLARPAK

Case Package:SOT-23

Datasheet:SIE802DF-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (L)
Number of Pins	10
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	1.9mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	10
JESD-30 Code	R-XDSO-N4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5.2W Ta 125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.2W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.9m Ω @ 23.6A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	42.7A
DS Breakdown Voltage-Min	30V
Height	800μm
Length	6.15mm
Width	5.16mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free