SIE816DF-T1-E3

new-10%

Manufacturer part number:SIE816DF-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 60A POLARPAK

Case Package:SOT-23

Datasheet:SIE816DF-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (L)
Number of Pins	10
Supplier Device Package	10-PolarPAK® (L)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	7.4mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	5.2W Ta 125W Tc
Element Configuration	Single
Power Dissipation	5.2W
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.4mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id	4.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 30V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	19.8A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	3.1nF
Drain to Source Resistance	7.4mOhm
Rds On Max	7.4 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free