SIHG22N60S-E3

new-10%

Manufacturer part number:SIHG22N60S-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 600V 22A TO247

Case Package:SOT-23

Datasheet:SIHG22N60S-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Supplier Device Package	TO-247AC
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	190mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	250W Tc
Power Dissipation	250W
Turn On Delay Time	24 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	68ns
Drain to Source Voltage (Vdss)	600V
Fall Time (Typ)	59 ns
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Input Capacitance	5.62nF
Drain to Source Resistance	160mOhm
Rds On Max	190 mΩ
Nominal Vgs	4 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free