SIR168DP-T1-GE3

new-10%

Manufacturer part number:SIR168DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 40A 34.7W 4.4mohm @ 10V

Case Package:SOT-23

Datasheet:SIR168DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5W Ta 34.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2040pF @ 15V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	70ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	2.4V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0044Ohm
Drain to Source Breakdown Voltage	30V
Nominal Vgs	2.4 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant