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SIR164DP-T1-GE3

SIR164DP-T1-GE3

SIR164DP-T1-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.5m Ω @ 15A, 10V ±20V 3950pF @ 15V 123nC @ 10V PowerPAK® SO-8

SOT-23

SIR164DP-T1-GE3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 3.2MOhm
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 5.2W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Rise Time 41ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 33.3A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 70A
Height 1.04mm
Length 4.9mm
Width 5.89mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.179729 $1.179729
10 $1.112951 $11.12951
100 $1.049955 $104.9955
500 $0.990523 $495.2615
1000 $0.934456 $934.456
SIR164DP-T1-GE3 Product Details

SIR164DP-T1-GE3 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3950pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 50A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [33.3A] according to its drain current.It is [52 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 70A.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.2V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SIR164DP-T1-GE3 Features


a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 70A.
a threshold voltage of 1.2V


SIR164DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIR164DP-T1-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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