NTMFS5H600NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTMFS5H600NLT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
3.3W Ta 160W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6680pF @ 30V
Current - Continuous Drain (Id) @ 25°C
35A Ta 250A Tc
Gate Charge (Qg) (Max) @ Vgs
89nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.475920
$4.47592
10
$4.222566
$42.22566
100
$3.983553
$398.3553
500
$3.758069
$1879.0345
1000
$3.545348
$3545.348
NTMFS5H600NLT1G Product Details
NTMFS5H600NLT1G Description
These MDmeshTM K3 Power MOSFETs were created by updating the MDmeshTM technology from STMicroelectronics and creating a new, enhanced vertical structure. These devices are perfect for even the most demanding applications thanks to their low on-resistance, excellent dynamic performance, and strong avalanche capability. This item can be applied in a variety of circumstances and is meant for general use.
NTMFS5H600NLT1G Features
? Small Footprint for Compact Design (5x6 mm)
? Reduced Conduction Losses through Low RDS(on)
? Low QG and Capacitance for Driver Loss Reduction