SIS932EDN-T1-GE3

new-10%

Manufacturer part number:SIS932EDN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH DL 30V PWRPAK 1212-8

Case Package:SOT-23

Datasheet:SIS932EDN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Channels	2
Power Dissipation	2.6W
Turn On Delay Time	15 ns
Power - Max	2.6W Ta 23W Tc
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	22mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Max Junction Temperature (Tj)	150°C
FET Feature	Standard
Drain to Source Resistance	18mOhm
Height	1.17mm
RoHS Status	ROHS3 Compliant