BSS8402DW-7-F

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BSS8402DW-7-F

Manufacturer part number:BSS8402DW-7-F

Manufacturer:Diodes Incorporated

Description:BSS8402DW-7-F datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website

Case Package:SOT-23

Datasheet:BSS8402DW-7-F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	10Ohm
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Max Power Dissipation	200mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	115mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	BSS8402DW
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200mW
Turn On Delay Time	10 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	115mA 130mA
Drain to Source Voltage (Vdss)	60V 50V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	115mA
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.13A
Dual Supply Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	2.5 V
Feedback Cap-Max (Crss)	5 pF
Height	1mm
Length	2.2mm
Width	1.35mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free