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TK46E08N1,S1X

TK46E08N1,S1X

TK46E08N1,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 80A TO-220

SOT-23

TK46E08N1,S1X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 103W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 4V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 40V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.00000 $1
500 $0.99 $495
1000 $0.98 $980
1500 $0.97 $1455
2000 $0.96 $1920
2500 $0.95 $2375

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