ATP302-TL-H

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Manufacturer part number:ATP302-TL-H

Manufacturer:ON Semiconductor

Description:ATP302-TL-H datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:ATP302-TL-H Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	ACTIVE (Last Updated: 18 hours ago)
Mounting Type	Surface Mount
Package / Case	ATPAK (2 leads+tab)
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	13mOhm
Terminal Finish	Tin/Bismuth (Sn/Bi)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	13m Ω @ 35A, 10V
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 20V
Current - Continuous Drain (Id) @ 25°C	70A Ta
Gate Charge (Qg) (Max) @ Vgs	115nC @ 10V
Rise Time	430ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	500 ns
Turn-Off Delay Time	420 ns
Continuous Drain Current (ID)	70A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	280A
Height	1.5mm
Length	6.5mm
Width	7.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free