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SQJ914EP-T1_GE3

SQJ914EP-T1_GE3

SQJ914EP-T1_GE3

Vishay Siliconix

Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET

SOT-23

SQJ914EP-T1_GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2018
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 27W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 30V
FET Feature Standard
Drain to Source Resistance 9.8mOhm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.51053 $1.53159
6,000 $0.48656 $2.91936
15,000 $0.46944 $7.0416

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