SUD50N02-04P-E3

new-10%

Manufacturer part number:SUD50N02-04P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 50A DPAK

Case Package:SOT-23

Datasheet:SUD50N02-04P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	2
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Power Dissipation-Max	8.3W Ta 136W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	8.3W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5000pF @ 10V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 4.5V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	34A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.006Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	100A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant