IRF1902PBF

new-10%

Manufacturer part number:IRF1902PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 4.2A 8-SOIC

Case Package:SOT-23

Datasheet:IRF1902PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Current Rating	4.2A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Power Dissipation	2.5W
Turn On Delay Time	5.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.2A Ta
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
Rise Time	13ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Input Capacitance	310pF
Drain to Source Resistance	85mOhm
Rds On Max	85 mΩ
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free