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TP0610K-T1-E3

TP0610K-T1-E3

TP0610K-T1-E3

Vishay Siliconix

TP0610K-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

SOT-23

TP0610K-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 10Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature ESD PROTECTION, LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 20
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C 185mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -185mA
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -3 V
Height 1.12mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.12106 $0.36318
6,000 $0.11372 $0.68232
15,000 $0.10639 $1.59585
30,000 $0.09758 $2.9274
75,000 $0.09391 $7.04325
TP0610K-T1-E3 Product Details

TP0610K-T1-E3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 23pF @ 25V.This device has a continuous drain current (ID) of [-185mA], which is its maximum continuous current.When VGS=-60V, and ID flows to VDS at -60VVDS, the drain-source breakdown voltage is -60V in this device.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

TP0610K-T1-E3 Features


a continuous drain current (ID) of -185mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 35 ns
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)

TP0610K-T1-E3 Applications


There are a lot of Vishay Siliconix TP0610K-T1-E3 applications of single MOSFETs transistors.

  • DC-to-DC converters
  • Consumer Appliances
  • Solar Inverter
  • Motor control
  • Telecom 1 Sever Power Supplies
  • Micro Solar Inverter
  • LCD/LED TV
  • Synchronous Rectification
  • LCD/LED/ PDP TV Lighting
  • Lighting

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