TP0610K-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website
SOT-23
TP0610K-T1-E3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
10Ohm
Terminal Finish
Matte Tin (Sn)
Additional Feature
ESD PROTECTION, LOW THRESHOLD
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
20
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
Turn On Delay Time
20 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
23pF @ 25V
Current - Continuous Drain (Id) @ 25°C
185mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.7nC @ 15V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
-185mA
Threshold Voltage
-3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-3 V
Height
1.12mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.12106
$0.36318
6,000
$0.11372
$0.68232
15,000
$0.10639
$1.59585
30,000
$0.09758
$2.9274
75,000
$0.09391
$7.04325
TP0610K-T1-E3 Product Details
TP0610K-T1-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 23pF @ 25V.This device has a continuous drain current (ID) of [-185mA], which is its maximum continuous current.When VGS=-60V, and ID flows to VDS at -60VVDS, the drain-source breakdown voltage is -60V in this device.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
TP0610K-T1-E3 Features
a continuous drain current (ID) of -185mA a drain-to-source breakdown voltage of -60V voltage the turn-off delay time is 35 ns a threshold voltage of -3V a 60V drain to source voltage (Vdss)
TP0610K-T1-E3 Applications
There are a lot of Vishay Siliconix TP0610K-T1-E3 applications of single MOSFETs transistors.