BUJ105A,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
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BUJ105A,127 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Position
SINGLE
Reference Standard
IEC-134
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
13 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 800mA, 4A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
8A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BUJ105A,127 Product Details
BUJ105A,127 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 13 @ 500mA 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 800mA, 4A.The device exhibits a collector-emitter breakdown at 400V.
BUJ105A,127 Features
the DC current gain for this device is 13 @ 500mA 5V the vce saturation(Max) is 1V @ 800mA, 4A
BUJ105A,127 Applications
There are a lot of WeEn Semiconductors BUJ105A,127 applications of single BJT transistors.