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PHE13005,127

  • PHE13005,127
  • PHE13005,127

PHE13005,127

PHE13005,127

WeEn Semiconductors

PHE13005,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13005,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Reference Standard IEC-60134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 75W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.56000 $0.56
10 $0.47600 $4.76
100 $0.35520 $35.52
500 $0.27904 $139.52
PHE13005,127 Product Details

PHE13005,127 Overview


This device has a DC current gain of 10 @ 2A 5V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Detection of Collector Emitter Breakdown at 400V maximal voltage is present.

PHE13005,127 Features


the DC current gain for this device is 10 @ 2A 5V
the vce saturation(Max) is 1V @ 1A, 4A

PHE13005,127 Applications


There are a lot of WeEn Semiconductors PHE13005,127 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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