BD243C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD243C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
65W
Base Part Number
BD243
Number of Elements
1
Element Configuration
Single
Power Dissipation
65W
Power - Max
2W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.5V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
6A
Height
9.3mm
Length
10.4mm
Width
4.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD243C-S Product Details
BD243C-S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 3A 4V.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at 6A is essential for high efficiency.The emitter base voltage can be kept at 5V for high efficiency.During maximum operation, collector current can be as low as 6A volts.
BD243C-S Features
the DC current gain for this device is 15 @ 3A 4V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 1A, 6A the emitter base voltage is kept at 5V
BD243C-S Applications
There are a lot of Bourns Inc. BD243C-S applications of single BJT transistors.