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BD539B-S

BD539B-S

BD539B-S

Bourns Inc.

BD539B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD539B-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation45W
Base Part Number BD539
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 5A
Collector Emitter Breakdown Voltage80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4988 items

BD539B-S Product Details

BD539B-S Overview


This device has a DC current gain of 12 @ 3A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 1.5V @ 1A, 5A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.During maximum operation, collector current can be as low as 5A volts.

BD539B-S Features


the DC current gain for this device is 12 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 5A
the emitter base voltage is kept at 5V

BD539B-S Applications


There are a lot of Bourns Inc. BD539B-S applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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