BCV47E6393HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCV47E6393HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
360mW
Power - Max
360mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
170MHz
RoHS Status
ROHS3 Compliant
BCV47E6393HTSA1 Product Details
BCV47E6393HTSA1 Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100μA, 100mA.Single BJT transistor comes in a supplier device package of SOT-23-3.This device displays a 60V maximum voltage - Collector Emitter Breakdown.In extreme cases, the collector current can be as low as 500mA volts.
BCV47E6393HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1V @ 100μA, 100mA the supplier device package of SOT-23-3
BCV47E6393HTSA1 Applications
There are a lot of Infineon Technologies BCV47E6393HTSA1 applications of single BJT transistors.