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BCV47E6393HTSA1

BCV47E6393HTSA1

BCV47E6393HTSA1

Infineon Technologies

BCV47E6393HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCV47E6393HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 360mW
Power - Max 360mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 170MHz
RoHS Status ROHS3 Compliant
BCV47E6393HTSA1 Product Details

BCV47E6393HTSA1 Overview


DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100μA, 100mA.Single BJT transistor comes in a supplier device package of SOT-23-3.This device displays a 60V maximum voltage - Collector Emitter Breakdown.In extreme cases, the collector current can be as low as 500mA volts.

BCV47E6393HTSA1 Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
the supplier device package of SOT-23-3

BCV47E6393HTSA1 Applications


There are a lot of Infineon Technologies BCV47E6393HTSA1 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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