BD544C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD544C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
SINGLE
Base Part Number
BD544
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
70W
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 5A 4V
Current - Collector Cutoff (Max)
700μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 1.6A, 8A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD544C-S Product Details
BD544C-S Overview
This device has a DC current gain of 15 @ 5A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.When collector current reaches its maximum, it can reach 8A volts.
BD544C-S Features
the DC current gain for this device is 15 @ 5A 4V the vce saturation(Max) is 1V @ 1.6A, 8A the emitter base voltage is kept at 5V
BD544C-S Applications
There are a lot of Bourns Inc. BD544C-S applications of single BJT transistors.