BD745B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD745B-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3.5W
Base Part Number
BD745
Number of Elements
1
Polarity
NPN
Power Dissipation
115W
Power - Max
3.5W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
20A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A 4V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
3V @ 5A, 20A
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
20A
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
BD745B-S Product Details
BD745B-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 5A 4V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 5A, 20A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Product comes in the supplier's device package SOT-93.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.The maximum collector current is 20A volts.
BD745B-S Features
the DC current gain for this device is 20 @ 5A 4V the vce saturation(Max) is 3V @ 5A, 20A the emitter base voltage is kept at 5V the supplier device package of SOT-93
BD745B-S Applications
There are a lot of Bourns Inc. BD745B-S applications of single BJT transistors.