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BD745B-S

BD745B-S

BD745B-S

Bourns Inc.

BD745B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD745B-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 3.5W
Base Part Number BD745
Number of Elements 1
Polarity NPN
Power Dissipation 115W
Power - Max 3.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 4V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 3V @ 5A, 20A
Collector Emitter Breakdown Voltage 80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 20A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
BD745B-S Product Details

BD745B-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 5A 4V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 5A, 20A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Product comes in the supplier's device package SOT-93.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.The maximum collector current is 20A volts.

BD745B-S Features


the DC current gain for this device is 20 @ 5A 4V
the vce saturation(Max) is 3V @ 5A, 20A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93

BD745B-S Applications


There are a lot of Bourns Inc. BD745B-S applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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