MPSA29G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPSA29G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MPSA29
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
100V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
1.2V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
12V
hFE Min
10000
Continuous Collector Current
500mA
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
Unknown
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.396360
$0.39636
10
$0.373925
$3.73925
100
$0.352759
$35.2759
500
$0.332791
$166.3955
1000
$0.313954
$313.954
MPSA29G Product Details
MPSA29G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).For high efficiency, the continuous collector voltage must be kept at 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.The maximum collector current is 500mA volts.
MPSA29G Features
the DC current gain for this device is 10000 @ 100mA 5V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 12V the current rating of this device is 500mA a transition frequency of 200MHz
MPSA29G Applications
There are a lot of ON Semiconductor MPSA29G applications of single BJT transistors.