KSD362RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSD362RTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
40W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 5A 5V
Current - Collector Cutoff (Max)
20μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
70V
Current - Collector (Ic) (Max)
5A
Transition Frequency
10MHz
Frequency - Transition
10MHz
RoHS Status
ROHS3 Compliant
KSD362RTU Product Details
KSD362RTU Overview
This device has a DC current gain of 40 @ 5A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500mA, 5A.Parts of this part have transition frequencies of 10MHz.There is a 70V maximal voltage in the device due to collector-emitter breakdown.
KSD362RTU Features
the DC current gain for this device is 40 @ 5A 5V the vce saturation(Max) is 1V @ 500mA, 5A a transition frequency of 10MHz
KSD362RTU Applications
There are a lot of Rochester Electronics, LLC KSD362RTU applications of single BJT transistors.