TIP50-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP50-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Number of Elements
1
Configuration
Single
Power Dissipation
40W
Power - Max
2W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Collector Emitter Breakdown Voltage
400V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIP50-S Product Details
TIP50-S Overview
This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.In extreme cases, the collector current can be as low as 1A volts.
TIP50-S Features
the DC current gain for this device is 30 @ 300mA 10V the vce saturation(Max) is 1V @ 200mA, 1A the emitter base voltage is kept at 5V
TIP50-S Applications
There are a lot of Bourns Inc. TIP50-S applications of single BJT transistors.